Symposium : B-2 : Advanced thin film materials for future electron device and sensor
Oral Session
  *Award marks are B:Bachelor, M:Master, D:Doctor, G:General
Entry No Keynote/
Presentation Date Time to
Time to
Award Presenter Affiliation Paper Title
Aug. 2814:00 - 16:00Room 1, Oral B-2(A)
North 3F #32 
Chair : Jin Kawakita NIMS 
B-2 Symposium Opening Remarks Aug. 28  14:00 14:10 Prof. Toyohiro Chikyow, NIMS
3025   Invited   B2-I28-001 Aug. 28   14:10 14:40 Takahiro NAGATA Wpi-MANA, National Institute for Materials Science,JST-PRESTO Combinatorial thin film synthesis for developments of new high dielectric constant thin film materials
3783     B2-O28-003 Aug. 28   14:40 14:55 *M Kiichi MATSUYAMA Muroran Institute of Technology Annealing Time Dependence of Sol-gel Derived CuGaO2 Films
Coffee Break Aug. 28  14:55 15:15
2106     B2-O28-004 Aug. 28   15:15 15:30 *G Mohamed B. ZAKARIA National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044,Department of Chemistry, Faculty of Science, Tanta University, Tanta, Gharbeya 31527 Mesostructured SrTiO3/BaTiO3 Hybrid Films by Surfactant-Templated Sol-Gel Pathway with Robust Ferroelectricity
2337     B2-O28-005 Aug. 28   15:30 15:45 Fanying MENG Shanghai institute of microsystem and information technology, Chinese academy of sciences Role of H2O in the characterization of the IWOH films prepared by reactive plasma deposition
3566     B2-O28-006 Aug. 28   15:45 16:00 Atsushi KOHNO Department of Applied Physics, Faculty of Science, Fukuoka University Electrical Characteristics of a- and b-Axis-Oriented Bismuth Titanate Thin Films Formed on Si(100) Substrates by Chemical Solution Deposition
Aug. 299:30 - 16:15Room 1, Oral B-2(B)
North 3F #32 
Chair : Atsushi Kohno Fukuoka University 
3588   Invited   B2-I29-001 Aug. 29   09:30 10:00 Takuji HOSOI Graduate School of Engineering, Osaka University Single-Crystalline GeSn Formation on Transparent Substrate and its Optoelectronic Applications
3063     B2-O29-002 Aug. 29   10:00 10:15 Wen-Cheng KE Department of Materials Science and Engineering, National Taiwan University of Science and Technology Influence of growth temperature of embedded indium-oxynitride quantum dots on contact performance of ITO on III-nitride light-emitting diodes
2417     B2-O29-003 Aug. 29   10:15 10:30 *D Hongxia LI School of Materials Science and Engineering, Harbin Institute of Technology Damage mechanisms for the irradiated PEEK by low energy proton
2369     B2-O29-004 Aug. 29   10:30 10:45 *D Md. Nazmul KAYES Graduate School of Engineering, Utsunomiya University Structural, Optical, and Photoelectrochemical Characterization of Thin Films of an Axially Chiral Bibenzo[c]phenanthrene Diol
2456     B2-O29-005 Aug. 29   10:45 11:00 Jen-Sue CHEN Department of Materials Science and Engineering, National Cheng Kung University UV Photosensing Characters of Zinc-Tin Oxide (ZTO) Thin Film Transistors Fabricated via Spin-Coating and Inkjet Printing
Aug. 2914:00 - 16:15Room 1, Oral B-2(C)
North 3F #32 
Chair : Toyohiro Chikyow NIMS 
3277   Invited   B2-I29-006 Aug. 29   14:00 14:30 Zuimin JIANG Department of Physics, Fudan University, Shanghai 200433, China Controllable epitaxial growth and physical properties of low dimensional Si based materials
2604     B2-O29-007 Aug. 29   14:30 14:45 *M Naofumi NISHIKAWA Dept. of Appl. Sci. for Electr. & Mat., Kyushu University Minority-carrier lifetimes in ultrananocrystalline diamond/amorphous carbon composite films prepared by coaxial arc plasma deposition
2246     B2-O29-008 Aug. 29   14:45 15:00 *D Dan SHAN Nanjing University, Yangzhou Polytechnic Institute,China Improved Carrier Mobility in High-conductive Si Nanocrystals via B doping
Coffee Break Aug. 29  15:00 15:15
2763     B2-O29-009 Aug. 29   15:15 15:30 *D Hippolyte P.A.G. ASTIER Cavendish Laboratory, JJ Thomson Av. CB3 0HE, Cambridge, UK Electrically Contacting Self-Assembled PbS Nanocrystals Using Graphene
3049     B2-O29-010 Aug. 29   15:30 15:45 *G Satish Laxman SHINDE National Institute for Materials Science Enhanced visible-light emission from Quantum dots sensitized GeO2/Ge perfect absorptive hetero-nano pyramids
3735     B2-O29-011 Aug. 29   15:45 16:00 *M Shizuma ISHIDA Graduate Scool of Engineering, Nagoya University High Density Formation of Fe-silicide Nanodots and Their Magnetic Properties
2870     B2-O28-002 Aug. 29   16:00 16:15 Nozomi NISHIZAWA Institute of Innovative Research, Tokyo Institute of Technology Growth of an ultra-thin crystalline AlOx tunnel barrier layer on GaAs-based surfaces for robust spin injection
Aug. 309:30 - 11:00Room 1, Oral B-2(D)
North 3F #32 
Chair : Atsushi Kohno Fukuoka University 
3262   Invited   B2-I30-001 Aug. 30   09:30 10:00 Martin L. GREEN NIST (National Institute of Standards and Technology) Applications of the Materials Genome Initiative to Advanced Thin Film Materials
3570     B2-O30-002 Aug. 30   10:00 10:15 *D Atsunori TANAKA Materials Science Program, University of California San Diego When GaN and Si Tango, Thermal Mismatches are Overcome for Thick GaN-on-Si Vertical Power Devices
3306     B2-O30-003 Aug. 30   10:15 10:30 *G Alexandra PALLA PAPAVLU National Institute for Lasers, Plasma, and Radiation Physics Direct laser writing of single walled carbon nanotubes for high performance gas sensors
3796     B2-O30-004 Aug. 30   10:30 10:45 *D Anh Tung DOAN International Center for Materials, Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS),Department of Condensed Matter Physics, Hokkaido University Lithography-free planar perfect absorbers for wide acceptance angle and polarization-independent spectrally selective infrared devices
B-2 Symposium Closing Remarks Aug. 30  10:45 11:00 Prof. Toyohiro Chikyow, NIMS